A Wideband 90° Continuous Phase Shifter for 60GHz Phased Array Transceiver in 90nm CMOS Technology

被引：0

作者：

Biglarbegian, Behzad ^{[1
]}

Nezhad-Ahmadi, Mohammad-Reza ^{[1
]}

Fakharzadeh, Mohammad ^{[1
]}

Safavi-Naeini, Safieddin ^{[1
]}

机构：

[1] Univ Waterloo, Intelligent Integrated Radio Syst Grp, ECE Dept, Waterloo, ON N2L 3G1, Canada

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

Phase shifter; CMOS; varactor; RTPS; V-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a wideband reflective-type phase-shifter in 90nm CMOS technology. The proposed phase shifter, employs a broadside coupler in the multi-layer metal structure in CMOS technology to attain 3-dB coupling at coupled and through ports where the phase difference between these two ports is 90 degrees. The reflective load contains a NMOS CMOS varactor with a tuning ratio of 3. Applying a 0-1 V DC tuning voltage, the overall phase shifter provides 0-87 degrees continuous phase shift, where the insertion loss of the phase shifter alters between 4.5-8 dB at the frequency range of 50-65 GHz and occupies chip area of 0.3x0.25mm2. The overall phase shift achieved by this design can be extended to 180 and 360 degree.

引用

页码：1832 / 1835

页数：4

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