Electrical properties of porous silicon stabilised by storage in ambient

被引：0
|
作者：
Ciurea, ML [1 ]
Lazar, M [1 ]
Lazanu, S [1 ]
Pentia, E [1 ]
Dragoi, V [1 ]
机构：
[1] Natl Inst Mat Phys, Bucharest, Romania
来源：
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical transport of stabilised porous silicon layers was investigated. The samples were stored in ambient for 1,5-2 years, A MIS-like C-V characteristic, a strong rectifying I-V curve and I-T dependence with two activation energies were obtained, Thermally stimulated depolarization currents have an activation energy of 0.81-0.87 eV. The electrical properties are discussed in the frame of a quantum confinement model, keeping into account the surface component.
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页码：177 / 180
页数：4
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