Minimisation of avalanche noise through modulation of location of clump charge in silicon low-high-low double drift region diode

被引：0
|
作者：
Dash, SK [1 ]
Dash, GN [1 ]
Pati, SP [1 ]
机构：
[1] SAMBALPUR UNIV,PG DEPT PHYS,BURLA,ORISSA,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
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页码：202 / 204
页数：3
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