Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers

被引：0
|
作者：
Cojocari, O
Popa, V
Ursaki, VV
Tigginyanu, IM
Mutamba, K
Saglam, M
Hartnagel, HL
机构：
来源：
CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2004年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality is studied using PL-measurements and electrical characterisation. DC-characteristics of 5mum-diameter anodes result in a cut-off frequency of 390GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed.
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页码：317 / 318
页数：2
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