3-D Resistance Model for Phase-Change Memory Cell

被引：3
|
作者：
Chen, Yihan [1 ]
Kwong, Kit Chu [1 ]
Lin, Xinnan [2 ]
Song, Zhitang [3 ]
Chan, Mansun [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
[2] Peking Univ Shenzhen, Sch Elect & Comp Engn, Grad Sch, Key Lab Integrated Microsyst,Sch Elect & Comp Eng, Shenzhen 518055, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 12期
基金：
中国国家自然科学基金;
关键词：
3-D; conformal mapping; phase-change (PC) radius; phase-change memory (PCM); resistance model; COMPACT MODEL;
D O I：
10.1109/TED.2014.2365012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a 3-D resistance model is proposed for phase-change (PC) memory cell based on cell geometry and RESET current. Explicit expression is developed for PC radius in terms of RESET current, cell geometry, and material property. Conformal mappings are used for SET and RESET resistance calculation in 2-D models, which solve the problem of current crowding in structures with complex boundary condition. In the 3-D model development, additional spreading resistance is considered, together with the bulk resistance stemmed from 2-D model to form the eventual complete expression. Models show good consistency with finite element simulation and experimental data.
引用
收藏
页码：4098 / 4104
页数：7
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