Epitaxial colossal magnetoresistive La0.67(Sr,Ca)0.33MnO3 films on Si

La-0.67(Sr,Ca)(0.33)MnO3 (LSCMO) films have been grown by a pulsed-laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/yttrium-stabilized zirconia (YSZ) heteroepitaxial layers. X-ray diffraction has revealed cube-on-cube growth of an epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the "diagonal-on-side" manner on top of the Bi4Ti3O12 (BTO) template. The maximum temperature coefficient of resistivity (TCR)=4.4% K-1 and colossal magnetoresistance (CMR) Deltarho/rhosimilar to2.9% kOe(-1) have been reached at 294 K. This was achieved due to the successive improvement of c-axis orientation of the layers: Full widths at half-maximum 0.65degrees, 0.58degrees, 0.65degrees, 1.13degrees, and 0.18degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. As a prototype of an uncooled bolometer, heteroepitaxial CMR structure on Si demonstrates, at 294 K, the noise equivalent temperature difference of 1.2 muK/rootHz@30 Hz. (C) 2003 American Institute of Physics.