Selective-Area Growth of InAs Nanowire Arrays on Si3N4/Si(111) by Molecular Beam Epitaxy

被引：0
|
作者：
Zhang, K. [1 ,2 ]
Ray, V. [4 ]
Herrera-Fierro, P. [4 ]
Sink, J. R. [1 ,2 ]
Toor, F. [1 ,2 ,3 ]
Prineas, J. P. [1 ,2 ,3 ]
机构：
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[2] Univ Iowa, Opt Sci & Technol, Iowa City, IA 52242 USA
[3] Univ Iowa, Dept Elect & Comp Engn, Iowa City, IA 52242 USA
[4] Univ Michigan, Lurie Nanofabricat Facil, Ann Arbor, MI 48109 USA
来源：
QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIV | 2017年 / 10114卷
基金：
美国国家科学基金会;
关键词：
III-V nanowires; MBE; selective-area epitaxy; self-assembled growth; GAAS NANOWIRES; SI; CATALYST; SILICON;
D O I：
10.1117/12.2267737
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
InAs nanowires directly integrated on Si platform show great promise in fabricating next generation mid-infrared optoelectronic devices. In this study we demonstrated the growth of catalyst-free, selective-area InAs nanowire arrays on electron beam patterned Si3N4/Si(111) by molecular beam epitaxy. Growth parameters were studied, and nanowire growth kinetic's dependence on patterned-mask hole diameter and interwire distance was investigated. Under certain growth conditions, nanowire diameter was found to be relatively independent of nanohole diameter and pitch. We also realized the growth of randomly-nucleated, self-assembled nanowires on Si (111) and investigated the temperature, flux influence on nanowire morphology.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy
    Yang, Che-Wei
    Chen, Wei-Chieh
    Lin, Hao-Hsiung
    2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2016,
  • [2] Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
    Brubaker, Matt D.
    Duff, Shannon M.
    Harvey, Todd E.
    Blanchard, Paul T.
    Roshko, Alexana
    Sanders, Aric W.
    Sanford, Norman A.
    Bertness, Kris A.
    CRYSTAL GROWTH & DESIGN, 2016, 16 (02) : 596 - 604
  • [3] Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy
    Hertenberger, S.
    Rudolph, D.
    Bichler, M.
    Finley, J. J.
    Abstreiter, G.
    Koblmueller, G.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
  • [4] InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy
    Robson, M. T.
    LaPierre, R. R.
    JOURNAL OF CRYSTAL GROWTH, 2016, 436 : 1 - 11
  • [5] Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
    Ruhstorfer, Daniel
    Lang, Armin
    Matich, Sonja
    Doeblinger, Markus
    Riedl, Hubert
    Finley, Jonathan J.
    Koblmueller, Gregor
    NANOTECHNOLOGY, 2021, 32 (13)
  • [6] Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
    Kruse, J. E.
    Lymperakis, L.
    Eftychis, S.
    Adikimenakis, A.
    Doundoulakis, G.
    Tsagaraki, K.
    Androulidaki, M.
    Olziersky, A.
    Dimitrakis, P.
    Ioannou-Sougleridis, V.
    Normand, P.
    Koukoula, T.
    Kehagias, Th.
    Komninou, Ph.
    Konstantinidis, G.
    Georgakilas, A.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (22)
  • [7] Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy
    Liu, Lei
    Wen, Lianjun
    He, Fengyue
    Zhuo, Ran
    Pan, Dong
    Zhao, Jianhua
    NANOTECHNOLOGY, 2024, 35 (06)
  • [8] Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy
    Chang, Yoon Jung
    Simmonds, Paul J.
    Beekley, Brett
    Goorsky, Mark S.
    Woo, Jason C. S.
    APPLIED PHYSICS LETTERS, 2016, 108 (16)
  • [9] Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates
    Robson, M. T.
    Dubrovskii, V. G.
    LaPierre, R. R.
    NANOTECHNOLOGY, 2015, 26 (46)
  • [10] Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy
    Gridchin, V. O.
    Kotlyar, K. P.
    Reznik, R. R.
    Dvoretskaya, L. N.
    Parfen'eva, A. V.
    Mukhin, I. S.
    Cirlin, G. E.
    TECHNICAL PHYSICS LETTERS, 2020, 46 (11) : 1080 - 1083
12345