Quantum levels in Ge quantum dots studied by photocurrent spectroscopy and admittance spectroscopy

被引：8
|
作者：
Zhou, H [1 ]
Huang, SH [1 ]
Rao, Y [1 ]
Jiang, ZM [1 ]
Lu, F [1 ]
机构：
[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 3-4期
关键词：
quantum dots; quantum levels; photocurrent; admittance spectroscopy;
D O I：
10.1016/S0038-1098(02)00765-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The quantum levels of self-assembled Ge quantum dots are studied by photocurrent spectra and admittance spectra. The photocurrent peaks appearing around 0.8 eV are ascribed to the indirect transition of the carriers from the quantum level in Ge dots to the conduction band of Si. The activation energies derived from the admittance spectra under different bias voltages are in the range of 0.257-0.356 eV, which indicates that the ground hole state in Ge dots of 40 nm in diameter is about 0.36 eV, and the Coulomb charging energy in this kind dots is about 10 meV. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：161 / 164
页数：4
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