Charge Transport in Graphene with Resonant Scatterers

被引：60
|
作者：
Titov, M. [1 ,2 ]
Ostrovsky, P. M. [3 ,4 ]
Gornyi, I. V. [2 ,3 ,5 ]
Schuessler, A. [3 ]
Mirlin, A. D. [2 ,3 ,6 ,7 ]
机构：
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Karlsruhe Inst Technol, DFG Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany
[3] Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[4] RAS, LD Landau Theoret Phys Inst, Moscow 119334, Russia
[5] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[6] Karlsruhe Inst Technol, Inst Theorie Kondensierten Mat, D-76128 Karlsruhe, Germany
[7] Petersburg Nucl Phys Inst, St Petersburg 188300, Russia
来源：
PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 07期
关键词：
CONDUCTIVITY; PHASE; GAS;
D O I：
10.1103/PhysRevLett.104.076802
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e(2)/(pi(2)h) per resonant impurity.
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页数：4
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