GaAs detector material made from 3-inch wafers

被引：5
|
作者：
Ayzenshtat, GI
Budnitsky, DL
Koretskaya, OB
Novikov, VA
Mokeev, DY
Okaevich, LS
Tolbanov, OP
Tyazhev, AV [1 ]
机构：
[1] Siberian Phys Tech Inst, Tomsk, Russia
[2] Sci & Prod State Enterprise Semicond Devices Res, Tomsk, Russia
[3] Tomsk VV Kuibyshev State Univ, Tomsk 634050, Russia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 531卷 / 1-2期
关键词：
GaAs; ionizing radiation detector; charge collection efficiency;
D O I：
10.1016/j.nima.2004.05.103
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We present first results obtained with pad detectors processed from 3 inch diameter GaAs wafers compensated with Cr. The detector characteristics are analyzed from the point of view of uniformity across the wafer. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：121 / 124
页数：4
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