Elastic Response of 10-nm Insulator Films Measured by Dynamic Indentation for Nano-scale Electron Device Fabrication

被引：1

作者：

Bolotov, Leonid ^{[1
]}

Uchida, Noriyuki ^{[1
]}

Chang, Wen Hsin ^{[1
]}

Maeda, Tatsuro ^{[1
]}

Migita, Shinji ^{[1
]}

机构：

[1] Nat Inst Adv Ind Sci & Technol AIST, Nanoelect Res Inst, Tsukuba, Ibaraki, Japan

来源：

2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2019年

关键词：

D O I：

10.23919/snw.2019.8782965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work addresses nanoscale measurements of mechanical properties of ultra-thin insulator films by a dynamic indentation atomic force microscopy (DI-AFM). The ability of the DI-AFM is discussed to clarify some challenges in quantitative evaluation of stiffness and elastic modulus of 10 nm films on Ge and Si.

引用

页码：47 / 48

页数：2

共 4 条

[1] Modification of silicon-on-insulator structures under nano-scale device fabrication
Naumova, OV
Antonova, IV
Popov, VP
Nastaushev, YV
Gavrilova, TA
Litvin, LV
Aseev, AL
MICROELECTRONIC ENGINEERING, 2003, 69 (2-4) : 168 - 172
[2] THE ELASTIC MODULUS OF ARTICULAR CARTILAGE AT NANO-SCALE AND MICRO-SCALE MEASURED USING INDENTATION TYPE ATOMIC FORCE MICROSCOPY
Moshtagh, P. Rahnamay
Pouran, B.
Weinans, H.
Zadpoor, A.
OSTEOARTHRITIS AND CARTILAGE, 2014, 22 : S359 - S360
[3] Size-dependent nonlinear response of thin elastic films with nano-scale thickness
Lim, CW
He, LH
INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES, 2004, 46 (11) : 1715 - 1726
[4] Sub-10-nm overlay accuracy in electron beam lithography for nanometer-scale device fabrication
Yamazaki, K
Fujiwara, A
Takahashi, Y
Namatsu, H
Kurihara, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12B): : 6788 - 6791

← 1 →