Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors

被引：19
|
作者：
Yun, Junggwon [1 ]
Cho, Kyoungah [1 ]
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
NANOTECHNOLOGY | 2010年 / 21卷 / 23期
关键词：
Selenium compounds - Mercury compounds - Timing circuits - Computer circuits - Nanocrystals - Flexible electronics - Thin film circuits - Thin films;
D O I：
10.1088/0957-4484/21/23/235204
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) films and n-channel HgSe-NC films were constructed on back-gate patterned plastic substrates. The NAND gate was made of two HgTe-p-channel thin film transistors (TFTs) in parallel and two HgSe-n-channel TFTs in series. The NOR gate was built up with both two HgSe-n-channel TFTs in parallel and two HgTe-p-channel TFTs in series. The mobility and on/off ratio for the p-channel TFTs were estimated to be 0.9 cm(2) V-1 s(-1) and 10, respectively, and those for the n-channel TFTs were measured to be 1.8 cm(2) V-1 s(-1) and 10(2), respectively. The NAND and NOR gates were operated with gains of 1.45 and 1.63 and transition widths of 7.8 and 6.2 V, respectively, at room temperature in air. In addition, the operations of the NAND and NOR logics are reproducible for up to 1000 strain cycles.
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页数：4
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