High Temperature Stability Evaluation of SiC MOSFETs

被引：0
|
作者：
Zhou, Weicheng [1 ]
Zhong, Xueqian [1 ]
Sheng, Kuang [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Zhejiang, Peoples R China
来源：
2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2014年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
SiC MOSFETs are expected to have higher thermal runaway temperature, compared with other SiC power devices. In this paper, high temperature stability of SiC MOSFETs is investigated by experiments and simulations. At room temperature, the maximum steady-state junction temperature of the SiC MOSFET is measured to exceed 270 degrees C and saber simulations based on experimental model reproduce the thermal process.
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页码：305 / 308
页数：4
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