Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

被引：6

作者：

Ma Zhong-Fa ^{[1
]}

Zhang Peng ^{[1
]}

Wu Yong ^{[1
]}

Li Wei-Hua ^{[1
]}

Zhuang Yi-Qi ^{[1
]}

Du Lei ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 03期

关键词：

trap; RTS noise; nano-MOSFETs; FIELD-EFFECT TRANSISTORS; COULOMB ENERGY;

D O I：

10.1088/1674-1056/19/3/037201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio ((tau) over bar (c)/(tau) over bar (e)) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.

引用

页数：4

共 20 条

[1] Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs
马中发
张鹏
吴勇
李伟华
庄奕琪
杜磊
Chinese Physics B, 2010, 19 (03) : 471 - 474
[2] A percolation study of RTS noise amplitudes in nano-MOSFETs by Monte Carlo simulation
Ma Zhongfa
Zhang Peng
Wu Yong
Li Weihua
Zhuang Yiqi
Du Lei
MICROELECTRONICS RELIABILITY, 2010, 50 (02) : 179 - 182
[3] The influence of the Coulomb-blockade effect on repulsive RTS noise in nano-MOSFETs
Ma, Zhongfa
Zhang, Peng
Wu, Yong
Li, Weihua
Zhuang, Yiqi
Du, Lei
Bao, Junlin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (01)
[4] Accurate extraction of the trap depth from RTS noise data by including poly depletion effect and surface potential variation in MOSFETs
Lee, Hochul
Yoon, Youngchang
Cho, Seongjae
Shin, Hyungcheol
IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (05): : 968 - 972
[5] Research of shot noise based on realistic nano-MOSFETs
Jia, Xiaofei
He, Liang
AIP ADVANCES, 2017, 7 (05)
[6] RTS Noise in MOSFETs: Mean Capture Time and Trap Position
Pavelka, Jan
Sikula, Josef
Chvatal, Milos
Tacano, Munecazu
2015 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2015,
[7] Trap competition inducing RTS noise in saturation range in N-MOSFETs
Leyris, C
Hoffmann, A
Valenza, M
Vildeuil, JC
Roy, F
NOISE IN DEVICES AND CIRCUITS III, 2005, 5844 : 41 - 51
[8] Research on Noise Suppression in Double-Gate Nano-MOSFETs Based on Monte Carlo Simulation
Jia, X.
He, L.
Chen, W.
MAPAN-JOURNAL OF METROLOGY SOCIETY OF INDIA, 2019, 34 (03): : 413 - 420
[9] Research on Noise Suppression in Double-Gate Nano-MOSFETs Based on Monte Carlo Simulation
Xiaofei Jia
Liang He
Wenhao Chen
MAPAN, 2019, 34 : 413 - 420
[10] Novel method for accurate extraction of fMAX for nano-scale MOSFETs
Ahn, JH
Yun, HS
Lim, S
Lee, HD
Park, SH
Lee, HS
Kang, YS
Kim, DB
Lee, SH
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (05) : 1201 - 1204

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