Total ionizing dose effects on Flash-based field programmable gate array

被引:41
|
作者
Wang, JJ [1 ]
Samiee, S [1 ]
Chen, HS [1 ]
Huang, CK [1 ]
Cheung, M [1 ]
Borillo, J [1 ]
Sun, SN [1 ]
Cronquist, B [1 ]
McCollum, J [1 ]
机构
[1] Actel Corp, Mountain View, CA 94043 USA
关键词
field programmable gate array (FPGA); floating gate transistor; ionizing radiation effects; nonvolatile memory;
D O I
10.1109/TNS.2004.839255
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The total ionizing dose effect on a commercial Flash-based field programmable gate array is investigated by gamma ray radiation. The floating-gate threshold and logic propagation delay are measured with respect to the total dose. A physical model is also developed to express the threshold in terms of total dose for both unbiased- and biased-radiation conditions. Experimental data of the threshold fit this model for extracting the modeling parameters. The modeling predictions match further experimental data very well for low to moderate total dose. Using modeling and SPICE simulation together, the prediction of the propagation delay is compared to the experimental data. The biased condition has a good fit while the unbiased prediction over-degrades the propagation delay with respect to the experimental data.
引用
收藏
页码:3759 / 3766
页数:8
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