Multilevel Atomic-Scale Transistors Based on Metallic Quantum Point Contacts

被引：27

作者：

Xie, Fangqing ^{[3
,4
]}

Maul, Robert ^{[1
]}

Obermair, Christian ^{[3
,4
]}

Wenzel, Wolfgang ^{[1
,2
]}

Schoen, Gerd ^{[1
,2
,4
,5
]}

Schimmel, Thomas ^{[1
,2
,3
,4
]}

机构：

[1] Forschungszentrum Karlsruhe, Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany

[2] Forschungszentrum Karlsruhe, Karlsruhe Inst Technol, Ctr Funct Nanostruct, D-76021 Karlsruhe, Germany

[3] Univ Karlsruhe, Karlsruhe Inst Technol, Inst Appl Phys, D-76131 Karlsruhe, Germany

[4] Univ Karlsruhe, Karlsruhe Inst Technol, Ctr Funct Nanostruct, D-76131 Karlsruhe, Germany

[5] Univ Karlsruhe, Karlsruhe Inst Technol, Inst Theoret Festkorperphys, D-76131 Karlsruhe, Germany

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 18期

关键词：

FABRICATION; TRANSPORT; NANOWIRES;

D O I：

10.1002/adma.200902953

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Multilevel logic and storage devices on the atomic scale are of great interest as they allow more efficient data storage and processing with a smaller number of logical gates. Here we demonstrate a multilevel atomic quantum transistor, allowing for the gate-controlled switching between different quantized conducting states providing a basis for the future development of novel ultra-small quantum-electronic devices.

引用

页码：2033 / +

页数：5

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