A high performance 0.13μm SOICMOS technology with Cu interconnects and low-k BEOL dielectric

被引：29

作者：

Smeys, P ^{[1
]}

McGahay, V ^{[1
]}

Yang, I ^{[1
]}

Adkisson, J ^{[1
]}

Beyer, K ^{[1
]}

Bula, O ^{[1
]}

Chen, Z ^{[1
]}

Chu, B ^{[1
]}

Culp, J ^{[1
]}

Das, S ^{[1
]}

Eckert, A ^{[1
]}

Hadel, L ^{[1
]}

Hargrove, M ^{[1
]}

Herman, J ^{[1
]}

Lin, L ^{[1
]}

Mann, R ^{[1
]}

Maciejewski, E ^{[1
]}

Narasimha, S ^{[1
]}

O'Neill, P ^{[1
]}

Rauch, S ^{[1
]}

Ryan, D ^{[1
]}

Toomey, J ^{[1
]}

Tsou, L ^{[1
]}

Varekamp, P ^{[1
]}

Wachnik, R ^{[1
]}

Wagner, T ^{[1
]}

Wu, S ^{[1
]}

Yu, C ^{[1
]}

Agnello, P ^{[1
]}

Connolly, J ^{[1
]}

Crowder, S ^{[1
]}

Davis, C ^{[1
]}

Ferguson, R ^{[1
]}

Sekiguchi, A ^{[1
]}

Su, L ^{[1
]}

Goldblatt, R ^{[1
]}

Chen, TC ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Hopewell Junction, NY 12533 USA

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852818

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：184 / 185

页数：2

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