Time and Spatial Resolved Measurement and Control of Temperature in Integrated MOS-Power Devices

被引：0

作者：

Gross, M. ^{[1
]}

Stoisiek, M. ^{[1
]}

Uhlig, T. ^{[2
]}

机构：

[1] Univ Erlangen Nurnberg, Chair Electron Devices, Erlangen, Germany

[2] X FAB Semicond Foundries AG, Erfurt, Germany

来源：

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2009年

关键词：

D O I：

10.1109/ISPSD.2009.5158033

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A method for the time and spatial resolved temperature measurement during active operation of large area integrated LDMOS transistors will be presented. The method uses the temperature dependence of the resistance of the transistors polysilicon gate network and refers to LDMOS transistors realized in 0.18 nine HV-CMOS-technology. A spatial resolved measurement over the surface of the device Will be reached by a segmented arrangement of multiple gate contacts to the gate electrode network. The segmented contacting scheme can also be used for an independent control of the different device segments and in such way for the control of the dissipated power and temperature development in the respective segments.

引用

页码：188 / +

页数：2

共 50 条

[1] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MOS DEVICES
JOHNSON, NM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1830 - 1831
[2] An estimation method of the channel temperature of power MOS devices
Bergogne, D
Allard, B
PESC 2000: 31ST ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-3, 2000, : 1594 - 1599
[3] Time Resolved Radiation Pyrometer For Transient Temperature Measurement
Rav, Amit S.
Saxena, A. K.
Joshi, K. D.
Kaushik, T. C.
Gupta, Satish C.
SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B, 2011, 1349 : 451 - 452
[4] Measurement and modeling of time- and spatial-resolved wafer surface temperature in inductively coupled plasmas
Hsu, C. C.
Titus, M. J.
Graves, D. B.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (03): : 607 - 614
[5] TEMPERATURE MEASUREMENT AND CONTROL-SENSING DEVICES
WITHERS, M
PAMELYEV.OG
CONTROL AND INSTRUMENTATION, 1969, 1 (08): : 56 - &
[6] TEMPERATURE SENSING, MEASUREMENT, AND CONTROL DEVICES AND TECHNIQUES
FLYNN, WR
CONTROL ENGINEERING, 1987, 34 (05) : 81 - 84
[7] POWER INTEGRATED DEVICES WITH SPATIAL COUPLING FOR AUTOMATION SYSTEMS.
Liniichuk, I.A.
Strashnov, A.A.
Zelisko, V.S.
Soviet electrical engineering, 1984, 55 (03): : 46 - 50
[8] Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy
Kuball, M.
Riedel, G. J.
Pomeroy, J. W.
Sarua, A.
Uren, M. J.
Martin, T.
Hilton, K. P.
Maclean, J. O.
Wallis, D. J.
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (02) : 86 - 89
[9] The evolution of integrated RF power measurement and control
Cowles, JC
MELECON 2004: PROCEEDINGS OF THE 12TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, VOLS 1-3, 2004, : 131 - 134
[10] MEASUREMENT OF SPATIAL VARIATIONS OF CARRIER LIFETIME IN SILICON POWER DEVICES
ZIMMERMANN, W
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02): : 671 - +

← 1 2 3 4 5 →