Research on the technique of accurately measuring thermal resistance of SiC MOSFET

被引：1

作者：

Liu, Ao ^{[1
]}

Zhang, Guobin ^{[2
]}

Liu, Tao ^{[2
]}

Li, Shaohong ^{[2
]}

Zhang, Teng ^{[2
]}

Huang, Runhua ^{[2
]}

Bai, Song ^{[2
]}

Xu, Shen ^{[1
]}

Sun, Weifeng ^{[1
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing, Peoples R China

[2] Nanjing Elect Devices Inst, Nanjing Elect Devices, State Key Lab Wide Bandgap Semicond Power Elect D, Nanjing 210016, Peoples R China

来源：

2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS | 2022年

关键词：

D O I：

10.1109/SSLChinaIFWS57942.2023.10070926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal resistance testing mechanism of SiC MOSFET is studied in this paper. The thermal resistance is an important performance parameter of SiC MOSFET. The shortcomings of traditional test methods are studied. Due to the difference of device structure and process level, the interface state in and near the gate oxygen of SiC MOSFET will affect the opening state of SiC MOSFET channels. The traditional thermal resistance test method is affected by this mechanism, which is not conducive to accurate evaluation of the thermal resistance of SiC MOSFET. In this paper, the method of SiC MOSFET temperature sensitive parameters is further studied. At the same time, comparative tests of thermal resistance tests are carried out for different current heating methods and combinations of temperature sensitive parameters. Based on the test results and mechanism analysis, the optimal thermal resistance evaluation method is given.

引用

页码：30 / 33

页数：4

共 50 条

[1] An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes
Vass-Varnai, Andras
Cho, Young Joon
Farkas, Gabor
Rencz, Marta
2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA), 2018, : 137 - 141
[2] Characteristic analysis of sic mosfet and research on the drive circuit for sic mosfet
Mao, Peng
Mei, Ru-Ru
Zhang, Mao
Zhang, Wei-Ping
Mao, Peng (maopeng@ncut.edu.cn), 1600, National Taiwan University of Science and Technology (35): : 135 - 144
[3] Measurement of Thermal Resistance of SiC MOSFET Module Based on Conduction Voltage Drop
Chen, Zhongyuan
Li, Jiapeng
Jin, Rui
Cui, Meiting
Guo, Chunsheng
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2024, 73
[4] A simple technique for measuring the thermal impedance and the thermal resistance of HBTs
Lonac, J. A.
Santarelli, A.
Meluarsky, I.
Fificori, F.
GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005, : 197 - 200
[5] MEASURING RESISTANCE DEVIATIONS QUICKLY AND ACCURATELY
WEISS, LJ
ELECTRONIC ENGINEERING, 1972, 44 (534): : 41 - &
[6] Thermal resistance technique for measuring the thermal conductivity of thin microporous membranes
García-Payo, MC
Izquierdo-Gil, MA
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (21) : 3008 - 3016
[7] A NEW AC MEASUREMENT TECHNIQUE TO ACCURATELY DETERMINE MOSFET CONSTANTS
THOMA, MJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1113 - 1116
[8] A circuit technique for accurately measuring coupling capacitance
Xu, WZ
Friedman, EG
15TH ANNUAL IEEE INTERNATIONAL ASIC/SOC CONFERENCE, PROCEEDINGS, 2002, : 176 - 180
[9] Electrical and Thermal Characterization of SiC Power MOSFET
Sato, Takashi
Oishi, Kazuki
Hiromoto, Masayuki
Shintani, Michihiro
2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2018,
[10] Assessing thermal resistance as a degradation metric for solder bump arrays in discrete SiC MOSFET packages
Kilian, Borja
Gleichauf, Jonas
Maniar, Youssef
Wittler, Olaf
Schneider-Ramelow, Martin
MICROELECTRONICS RELIABILITY, 2024, 156

← 1 2 3 4 5 →