Modeling of transient enhanced diffusion based on evolution of {311} defects

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作者：
Gencer, AH
Dunham, ST
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来源：
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY | 1996年 / 96卷 / 04期
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O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Recent observations on ion implanted and annealed samples show that interstitial-type extended defects form during the process [1, 2]. For sub-amorphizing silicon implants, all of the excess interstitials precipitate into these rad-like {311} defects. This, along with the observation that the time scale for dissolution of these defects is about the same as the time scale of transient enhanced diffusion (TED), suggests that (311) defects are a primary source of interstitials under TED conditions. We have developed a comprehensive model which accounts for the evolution of these defects during ion implant annealing as reported by Eaglesham ed al. [1], and also predicts TED as reported by Packan [3].
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页码：155 / 163
页数：9
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