Characterization of oxide films on SiC by spectroscopic ellipsometry

被引：20
|
作者：
Iida, T
Tomioka, Y
Hijikata, Y
Yaguchi, H
Yoshikawa, M
Ishida, Y
Okumura, H
Yoshida, S
机构：
[1] Saitama Univ, Dept Elect & Elect Syst Engn, Urawa, Saitama 3388570, Japan
[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan
[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 10B期
关键词：
spectroscopic ellipsometry; 6H-SiC; refractive index; oxidation; SiC/SiO2; interface;
D O I：
10.1143/JJAP.39.L1054
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have, for the first time. evaluated the optical constants of thermally oxidized films on SIC by spectroscopic ellipsometry, and discussed the characteristics of SiC/SiO2 interfaces. It was found that the effective refractive indices are smaller than those of the oxide films on Si. They increase with oxidation time, or oxide thickness, reaching to the values of Si oxides. The refractive indices also depend on the oxidation methods, and the pyrogenic oxidation brings about larger refractive indices than dry oxidation. The origin of the small refractive indices of oxide films on SiC was discussed in terms of interface structures and composition in comparison with those of oxide films on Si.
引用
收藏
页码：L1054 / L1056
页数：3
相关论文
共 50 条
  • [1] Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry
    Tomioka, Y
    Iida, T
    Midorikawa, M
    Tukada, H
    Yoshimoto, K
    Hijikata, Y
    Yaguchi, H
    Yoshikawa, M
    Ishida, Y
    Kosugi, R
    Yoshida, S
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1029 - 1032
  • [2] Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry
    Iida, Takeshi
    Tomioka, Yuichi
    Yoshimoto, Kazuo
    Midorikawa, Masahiko
    Tukada, Hiroyuki
    Orihara, Misao
    Hijikata, Yasuto
    Yaguchi, Hiroyuki
    Yoshikawa, Masahito
    Itoh, Hisayoshi
    Ishida, Yuuki
    Yoshida, Sadafumi
    Iida, T., 1600, Japan Society of Applied Physics (41): : 800 - 804
  • [3] Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry
    Iida, T
    Tomioka, Y
    Yoshimoto, K
    Midorikawa, M
    Tukada, H
    Orihara, M
    Hijikata, Y
    Yaguchi, H
    Yoshikawa, M
    Itoh, H
    Ishida, Y
    Yoshida, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2A): : 800 - 804
  • [4] Spectroscopic ellipsometry characterization of tungsten-doped vanadium oxide films
    Wang P.
    Zhang Y.
    Wu L.
    Cao Y.
    Song L.
    Zhang Y.
    Zhang, Yuzhi (yzzhang@mail.sic.ac.cn), 2016, Chinese Ceramic Society (44): : 464 - 468
  • [5] Variable Angle Spectroscopic Ellipsometry Characterization of Graphene Oxide in Methanol Films
    Politano, Grazia Giuseppina
    Versace, Carlo
    CRYSTALS, 2022, 12 (05)
  • [6] Characterization of 3C-SiC by spectroscopic ellipsometry
    Jansson, R
    Zangooie, S
    Arwin, H
    Järrendahl, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 218 (01): : R1 - R2
  • [7] Characterization of PECVD SiN films by spectroscopic ellipsometry
    Brierley, SK
    Nguyen, L
    AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS - 1996, 1997, 446 : 145 - 150
  • [8] SPECTROSCOPIC ELLIPSOMETRY FOR THE CHARACTERIZATION OF THIN-FILMS
    FERRIEU, F
    LECAT, JH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) : 2203 - 2208
  • [9] Characterization of inhomogeneous dielectric films by spectroscopic ellipsometry
    Rivory, J
    THIN SOLID FILMS, 1998, 313 : 333 - 340
  • [10] Spectroscopic ellipsometry on silicon-oxide films on silicon
    Jungk, G
    Grabolla, T
    THIN SOLID FILMS, 1998, 335 (1-2) : 253 - 257
12345