Growth of ZnSe on GaAs(1 1 0) surfaces by molecular beam epitaxy

Single crystal films of ZnSe have been grown on nonpolar GaAs(110) surfaces by molecular beam epitaxy (MBE). The epitaxial films have been characterized by in situ reflection high-energy electron diffraction (RHEED), ex situ scanning electron microscopy (SEM) and X-ray diffraction. RHEED and SEM images of the surfaces reveal the formation of facets which are aligned along the [001] direction. The formation of facets indicates that ZnSe growth on the (110) surface proceeds 6 degrees-13 degrees off the vicinal (110) surface. Facet-free ZnSe surface has been successfully grown on a GaAs(110) 6 degrees-off the substrate. (C) 1998 Elsevier Science B.V. All rights reserved.