FABRICATION OF HIGH ASPECT ALUMINUM DOPED ZINC OXIDE NANOMECHANICAL STRUCTURES BY DEEP RIE AND ALD

This work reports the patterning of high aspect aluminum doped zinc oxide (AZO) for nanowall hollows and capacitive resonators by deep reactive ion etching (deep RIE) and atomic layer deposition (ALD). Nanowall hollows with 50 nm in thickness and 15 mu m in height as well as smooth surfaces have been achieved and the aspect ratio of their height-to-width is as high as 300. Suspended AZO capacitive resonators have been successfully fabricated. Its resonant frequency is observed at 10.4 kHz and the quality factor (Q) is approximately 500.