Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe0.5Mn0.5O3

被引:38
|
作者
Choi, Eun-Mi [1 ]
Fix, Thomas [1 ]
Kursumovic, Ahmed [1 ]
Kinane, Christy J. [2 ]
Arena, Dario [3 ]
Sahonta, Suman-Lata [1 ]
Bi, Zhenxing [4 ]
Xiong, Jie [4 ]
Yan, Li [4 ]
Lee, Jun-Sik [5 ]
Wang, Haiyan [6 ]
Langridge, Sean [2 ]
Kim, Young-Min [7 ,8 ]
Borisevich, Albina Y. [7 ]
MacLaren, Ian [9 ]
Ramasse, Quentin M. [10 ]
Blamire, Mark G. [1 ]
Jia, Quanxi [4 ]
MacManus-Driscoll, Judith L. [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci, Cambridge CB3 0FS, England
[2] Rutherford Appleton Lab, ISIS, Sci & Technol Facil Council, Didcot OX11 0QX, Oxon, England
[3] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA
[4] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
[5] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
[6] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
[7] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[8] Korea Basic Sci Inst, Div Electron Microscop Res, Taejon 305806, South Korea
[9] Univ Glasgow, SUPA Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[10] SciTech Daresbury, SuperSTEM, Warrington WA4 4AD, Cheshire, England
基金
英国工程与自然科学研究理事会; 欧洲研究理事会; 美国国家科学基金会;
关键词
TUNNEL-JUNCTIONS; BIFEO3; BIMNO3; MAGNETIZATION; INTERFACES; BARRIERS; MEMORY; PHASE;
D O I
10.1002/adfm.201401464
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Highly strained films of BiFe0.5Mn0.5O3 (BFMO) grown at very low rates by pulsed laser deposition were demonstrated to exhibit both ferrimagnetism and ferroelectricity at room temperature and above. Magnetisation measurements demonstrated ferrimagnetism (T-C similar to 600K), with a room temperature saturation moment (M-S) of up to 90 emu/cc (similar to 0.58 mu(B)/f.u) on high quality (001) SrTiO3. X-ray magnetic circular dichroism showed that the ferrimagnetism arose from antiferromagnetically coupled Fe3+ and Mn3+. While scanning transmission electron microscope studies showed there was no long range ordering of Fe and Mn, the magnetic properties were found to be strongly dependent on the strain state in the films. The magnetism is explained to arise from one of three possible mechanisms with Bi polarization playing a key role. A signature of room temperature ferroelectricity in the films was measured by piezoresponse force microscopy and was confirmed using angular dark field scanning transmission electron microscopy. The demonstration of strain induced, high temperature multiferroism is a promising development for future spintronic and memory applications at room temperature and above.
引用
收藏
页码:7478 / 7487
页数:10
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