Low phase noise, InGaP/GaAs HBT VCO MMIC for millimeter-wave applications

被引：2

作者：

Kurachi, S ^{[1
]}

Yoshimasu, T ^{[1
]}

机构：

[1] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka 8080135, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2005年 / E88C卷 / 04期

关键词：

InGaP/GaAs HBT VCO; millimeter-wave; low phase noise;

D O I：

10.1093/ietele/e88-c.4.678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 turn x 1.34 nun and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of - 118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.

引用

页码：678 / 682

页数：5

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