MOCVD growth of MgSe thin films on GaAs substrates

被引：18

作者：

Jiang, FY ^{[1
]}

Liao, QH ^{[1
]}

Fan, GH ^{[1
]}

Xiong, CB ^{[1
]}

Peng, XX ^{[1
]}

Pan, CK ^{[1
]}

Liu, NH ^{[1
]}

机构：

[1] Nanchang Univ, Inst Mat Sci, Nanchang 330047, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 183卷 / 03期

基金：

中国国家自然科学基金;

关键词：

MgSe; zincblende; MOCVD;

D O I：

10.1016/S0022-0248(97)00426-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MgSe thin films have been grown by metal-organic chemical vapor deposition on GaAs substrates. Our experimental results show that the crystal structure of MgSe depends strongly on both the growth temperature and the substrate orientation. Using the X-ray diffraction technique, we observed the three phases of MgSe; the rock salt, wurtzite and zincblende structures. The lattice constant of zincblende MgSe was determined to be 5.96 Angstrom. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：289 / 293

页数：5

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