Investigation of specific contact resistance of ohmic contacts to B-doped homoepitaxial diamond using transmission line model

被引：23
|
作者：
Chen, YG
Ogura, A
Yamasaki, S
Okushi, H
机构：
[1] Natl Inst Adv Ind Sci & Technol, AIST, Damond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Corp, CREST, JST, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2004年 / 13卷 / 11-12期
关键词：
diamond films; ohmic contact; interface; transmission line model;
D O I：
10.1016/j.diamond.2004.07.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, metal (Ti/Pt/Au) contacts to mesa of boron-doped (boron concentration: similar to10(18) cm(-3)) homoepitaxial diamond were fabricated by metal deposition followed by thermal annealing at 450 degreesC. Specific contact resistance was determined by characterizing the current-voltage (I-V) relations from transmission line model (TLM) measurement. The specific contact resistances determined from linear TLM corresponding to different lengths of rectangular contacts were in the order of 10(-4) Omega cm(2). The results suggest that it is possible to reduce the specific contact resistance to 10(-5)-10(-6) Omega cm(2), which would satisfy the operational requirements of diamond electronic devices, provided the dopant concentration in diamond can be increased to 10(19) - 10(20) cm(-3) (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：2121 / 2124
页数：4
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