Raman spectra and photoluminescence properties of In-doped ZnO nanostructures

被引:58
|
作者
Zhao, Jing [1 ]
Yan, Xiaoqin [1 ]
Yang, Ya [1 ]
Huang, Yunhua [1 ]
Zhang, Yue [1 ,2 ]
机构
[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
[2] State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO; Nanomaterials; In-doping; Raman; Luminescence;
D O I
10.1016/j.matlet.2009.11.074
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In-doped ZnO nanostructures with four different morphologies, which are nanotetrapods, nanocombs, nanowires, and nanodisks, have been synthesized on silicon substrates by a simple thermal evaporation method. The XRD patterns show the In-doped ZnO nanostructures are all with the hexagonal wurtzite structure, and a slight difference in lattice parameters had been detected among the samples with various morphologies. The Raman spectra demonstrate that the vibrational mode of 2LA, which is very weak in undoped ZnO, was strongly enhanced with indium ion doping into ZnO structures. The photoluminescence (PL) measurements indicate that the nanodisks have a relative strong ultraviolet (UV) emission than other three kinds of samples. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:569 / 572
页数:4
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