Resistive switching and synaptic plasticity in HfO2-based memristors with single-layer and bilayer structures

被引：0
|
作者：
Duan, Qingxi [1 ]
Xu, Liying [1 ]
Zhu, Jiadi [1 ]
Sun, Xinhao [1 ]
Yang, Yuchao [1 ]
Huang, Ru [1 ]
机构：
[1] Peking Univ, Key Lab Microelect Devices & Circuits MOE, Inst Microelect, Beijing 100871, Peoples R China
来源：
2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
memristor; synaptic plasticity; conducting filament; oxygen vacancy; DEVICE;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Here we report a device size and structure dependent study on the resisitive switching and synaptic plasticity in HfO2-based memristive devices. We found that the on/off ratio of resistive switching constantly increases as device size decreases, and bilayer Pt/TaOx/HfO2/Pt devices generally exhibit more uniform switching characteristics and lower threshold voltages compared with single-layer Pt/HfO2/Pt devices. Long-term potentiation and depression behaviors have been emulated using such bilayer devices, suggesting potential applications for neuromorphic hardware.
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页数：3
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