Laser beam sources as tools in semiconductor processing

被引:0
|
作者
Opower, H [1 ]
机构
[1] DLR, Inst Tech Phys, D-70569 Stuttgart, Germany
来源
关键词
D O I
10.1002/(SICI)1521-396X(199804)166:2<555::AID-PSSA555>3.0.CO;2-D
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Laser beam sources as processing tools must be adapted to the requirements of specific applications. In order to obtain a satisfactory survey a limited number of distinct applications has been selected: the laser supported growth of epitaxial layers, the direct structuring by laser induced ablation and a new type of controllable parallel lithography with the help of semiconductor diode laser arrays. Each of these examples demands a separate treatment. The requirements which the lasers have to fulfill are the result of an accurate description of the process involved according to the special objectives. Therefore the three processes are briefly outlined. Two of them require solid state lasers with ultrashort pulses and high repetition rates, the parallel lithography is based upon the availability of blue or UV laser diodes.
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页码:555 / 567
页数:13
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