THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas

被引：62
|
作者：
Liu, TA
Tani, M
Pan, CL
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[2] Osaka Univ, Res Ctr Supercond Photon, Suita, Osaka 5650871, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 05期
关键词：
D O I：
10.1063/1.1541105
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We compare the performance of THz photoconductive (PC) emitter antennas fabricated on multienergy arsenic ion implanted GaAs (multi-GaAs:As+) and semi-insulating GaAs. High damage threshold biasing (>60 kV/cm) and large saturation optical-pumping power (similar to20 mW) for multi-GaAs:As+ based PC antennas are reported. Carrier mobility in the As ion implanted layer of GaAs:As+ was estimated to be about 150 cm(2)/V/s, which was comparable to that of. low,temperature GaAs. (C) 2003 American Institute of Physics.
引用
收藏
页码：2996 / 3001
页数：6
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