Low-power and high-speed LSIs using 0.25-μm CMOS/SIMOX

Various high-performance SOI CMOS circuits were fabricated using fully-depleted 0.25-mu m gate MOSFETs on a low-dose SIMOX substrate. 2.4-Gbps operations were achieved for I/O and speed conversion circuits which are key elements in a multimedia communication LSI. LVTTL-cmpatible gate array LSI was developed with an ESD protection circuit which is the first one to meet the MIL standard. A 120-kG test LSI was fabricated on the gate array, and the LSI performances using three kind of technologies; 0.25-mu m bulk and SIMOX and 0.5-mu m bulk; were compared. A 0.25-mu m SIMOX LSI was 10% faster with 35% less power dissipation compared with a 0.25-mu m bulk LSI. The 0.25-mu m SIMOX LSI can oprate at a V-DD of 1.2 V to attain the same speed as the 0.5-mu m bulk LSI operating at 3.3 V, and this results in 1/40 power reduction. For the high-speed communication use, an ATM-switch LSI with 220-kG and a 110-kb memory was fabricated. A highperformance of 2.5-Gbps interface speed and 312-Mbps internal speed were achieved using 0.25-mu m CMOS/SIMOX. This ATM-switch LSI has the greatest bandwidth of 40-Gbps ever reported using a one-chip ATM-switch LSI.