Temperature dependence of the driving properties for a green thermally activated delayed fluorescence device with a mixed host

被引:0
|
作者
Lee, Sang-Min [1 ,2 ]
Ju, Byeong-Kwon [2 ]
Lee, Chan-Jae [1 ]
机构
[1] Korea Elect Technol Inst, Display Mat & Components Res Ctr, 25 Saenari Ro, Seongnam Si 463816, Gyeonggi Do, South Korea
[2] Korea Univ, Coll Engn, Display & Nanosyst Lab, 145 Anam Ro, Seoul 136713, South Korea
关键词
Organic light emitting diode; Transient electroluminescence; Thermally activated delayed fluorescence; Temperature; Mixed host; LIGHT-EMITTING-DIODES; MOBILITY; ELECTROLUMINESCENCE; GENERATION; STATE; FIELD;
D O I
10.1016/j.tsf.2018.05.053
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temperature dependence of organic light-emitting diodes (OLEDs) with green thermally activated delayed fluorescence (TADF) was investigated in this study. The temperature-dependent driving properties of an OLED device based on TADF were analyzed and its transient electroluminescence characteristics at various temperatures were investigated. TADF materials feature an additional mechanism called reverse intersystem crossing (RISC) that is forbidden in conventional fluorescence. The ratio of RISC is known to be proportional to temperature. We found that the luminance of the device with a TADF material was dependent on the temperature when under fixed voltage but not when under a fixed current density. In addition, the spectrum, luminance, and power efficiency were slightly shifted as the temperature was varied from -20 degrees C to 50 degrees C. Moreover, with increasing temperature and the use of a mixed host, the rising-and decay-time properties were improved. Lastly, the dependence of device performance on the host ratio was analyzed. The results revealed that temperature dependence of rising time was due to influence of increase in both mobility and ratio of RISC, while that of decay time was mainly attributed to ratio of RISC.
引用
收藏
页码:166 / 170
页数:5
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