Engineering Strategies in Emerging Fluorite-Structured Ferroelectrics

Ferroelectricity has been increasingly applied to develop fluorite-structured oxides since its discovery in 2011. Unlike conventional ferroelectric materials, these materials are compatible with complementary metal oxide semiconductor technology with established fabrication techniques. Early stage research has focused on enhancing the ferroelectricity in solid solution films for nonvolatile data storage. Recently, engineering strategies, such as those that entail the use of morphotropic phase boundaries to achieve high permittivity and develop artificial structures such as nanolaminates/superlattices, have been suggested to enhance ferroelectricity/antiferroelectricity; such strategies have the potential to provide new pathways for advanced nanoelectronics. Furthermore, the dielectric constant, remanent polarization, and processing window applied in these strategies yield more desirable outcomes than the solid solutions. Such strategies are also believed to be applicable to the design of cell capacitors for dynamic and ferroelectric random-access memory technology. However, a comprehensive review of these ferroelectricity-related engineering strategies has not yet been reported. Thus, recently developed engineering strategies for fluorite-structured ferroelectrics are reviewed in this paper.