AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

被引：132

作者：

El Fatimy, A. ^{[1
,2
]}

Dyakonova, N. ^{[3
]}

Meziani, Y. ^{[4
]}

Otsuji, T. ^{[1
]}

Knap, W. ^{[3
]}

Vandenbrouk, S. ^{[5
]}

Madjour, K. ^{[5
]}

Theron, D. ^{[5
]}

Gaquiere, C. ^{[5
]}

Poisson, M. A. ^{[6
]}

Delage, S. ^{[6
]}

Prystawko, P. ^{[7
]}

Skierbiszewski, C. ^{[7
]}

机构：

[1] Tohoku Univ, RIEC, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales

[3] Univ Montpellier 2, Etud Semicond Grp, UMR 5650, CNRS, Montpellier, France

[4] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

[5] CNRS, Inst Elect & Microelect Nord, UMR 8520, Villeneuve Dascq, France

[6] Thales Res & Technol, Thales, Orsay, France

[7] PAS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; wide band gap semiconductors; FAR-INFRARED-EMISSION;

D O I：

10.1063/1.3291101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov-Shur plasma wave instability in the gated two-dimensional electron gas.

引用

页数：4

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