Estimation of Carrier Density of Wide Bandgap Semiconductor β-Ga2O3 Single Crystals by THz Reflectance Measurement

被引：0

作者：

Saito, Shingo ^{[1
]}

Onuma, Takeyoshi ^{[1
,2
]}

Sasaki, Kohei ^{[1
,3
]}

Kuramata, Akito ^{[3
]}

Sekine, Norihiko ^{[1
]}

Kasamatsu, Akifumi ^{[1
]}

Higashiwaki, Masataka ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Kogakuin Univ, Hachioji, Tokyo 1920015, Japan

[3] Tamura Corp, Sayama, Saitama 3501328, Japan

来源：

2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) | 2015年

关键词：

TECHNOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to estimate carrier density on wide bandgap semiconductor beta-Ga2O3, we made a measurement of THz reflectance spectra of beta-Ga2O3 samples by using a THz time-domain spectroscopic method. The tails of reflectance structures were shifted to higher energy side with increasing the carrier density. We treated the structure was caused by plasmon, and calculated the carrier density of each samples. The carrier densities obtained by the THz reflection measurements showed a good agreement with the results by Hall-effect measurements. These results indicated that THz spectroscopy is a useful method to estimate the carrier density of beta-Ga2O3 samples.

引用

页数：2

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