Technology and Investigation of Ohmic Contacts to Thermoelectric Materials

被引:14
|
作者
Shtern, Y. I. [1 ]
Mironov, R. E. [1 ]
Shtern, M. Y. [1 ]
Sherchenkov, A. A. [1 ]
Rogachev, M. S. [1 ]
机构
[1] Natl Res Univ Elect Technol, Shokin Sq,Bldg 1, Moscow, Russia
关键词
D O I
10.12693/APhysPolA.129.785
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Technology is developed, materials and regimes of the fabrication of ohmic contacts to the effective thermoelectric materials Bi2Te2.8Se0.2 (n-type) and Bi0.5Sb1.5Te3 (p-type) are determined. Ohmic contacts were obtained by the vacuum deposition of nickel. Factors determining adhesion strength and resistivity of fabricated contacts are determined. Process of surface preparation of the thermoelectric materials before the ohmic contact deposition is optimized during the technology development. The use of electrochemical polishing, ultrasound treatment, finish cleaning in toluene and isopropyl alcohol vapor, and annealing in vacuum allowed achieving stable results in the formation of contacts. It was shown that contacts fabricated using of electron-beam evaporation of nickel possess maximum adhesion strength of 18-19 N/mm(2). It was found that high adhesion is caused by the existence of transition layer in the metal-thermoelectric material contact range, formed due to the interaction of metal with the components of thermoelectric material. Proposed technology allows obtaining ohmic contacts with the resistance of the unit area not exceeding 10(-10) Ohm m(2).
引用
收藏
页码:785 / 787
页数:3
相关论文
共 50 条
  • [1] Ohmic contacts to Gallium Nitride materials
    Greco, Giuseppe
    Iucolano, Ferdinando
    Roccaforte, Fabrizio
    APPLIED SURFACE SCIENCE, 2016, 383 : 324 - 345
  • [2] Ohmic contacts to ZnSe-based materials
    Fijol, JF
    Holloway, PH
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1996, 21 (02) : 77 - 128
  • [3] A TEM INVESTIGATION OF NIAUGE OHMIC CONTACTS TO GAAS
    ZHANG, XM
    STATONBEVAN, AE
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 303 - 308
  • [4] INVESTIGATION OF MAGNESIUM SILICIDE OHMIC CONTACTS BY TEM
    MCCAFFREY, JP
    JANEGA, PL
    SPROULE, GI
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 653 - 658
  • [5] INVESTIGATION OF MAGNESIUM SILICIDE OHMIC CONTACTS BY TEM
    MCCAFFREY, JP
    JANEGA, PL
    SPROULE, GI
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 653 - 658
  • [6] Thermal behavior of Ni ohmic contacts to n-SiC: A materials and electrical reliability investigation
    Cole, MW
    Hubbard, C
    Demaree, D
    Fountzoulas, CG
    Natarajan, A
    Miller, RA
    Harris, D
    Xie, K
    Searson, P
    PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 1998, 98 (02): : 392 - 399
  • [7] Investigation on the performance testing technology of nanowires array thermoelectric materials
    Wang, W
    Si, LP
    Zhang, WL
    Zhang, JZ
    Gao, JP
    TWENTIETH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS, 2001, : 519 - 520
  • [8] OPTIMIZATION OF OHMIC CONTACTS FOR RELIABLE HETEROSTRUCTURE GAAS MATERIALS
    WU, CS
    YU, KK
    HU, M
    KANBER, H
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (11) : 1265 - 1271
  • [9] An investigation of refractory metal ohmic contacts to gallium nitride
    Smith, MA
    Kapoor, VJ
    Hickman, R
    VanHove, J
    PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1996, 96 (11): : 133 - 141
  • [10] Investigation of ohmic and Schottky contacts to n-GaN
    Pushnyi, BV
    Egorov, BV
    Shmidt, NM
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 621 - 624