Germanium Layer Transfer with Low Temperature Direct Bonding and Epitaxial Lift-off Technique for Ge-based monolithic 3D integration

被引：9

作者：

Maeda, Tatsuro ^{[1
]}

Ishii, Hiroyuki ^{[1
]}

Chang, Wen Hsin ^{[1
]}

Irisawa, Toshifumi ^{[1
]}

Kurashima, Yuichi ^{[1
]}

Takagi, Hideki ^{[1
]}

Uchida, Noriyuki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan

来源：

2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2019年

关键词：

D O I：

10.23919/snw.2019.8782955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated high-quality single crystal Germanium (Ge) layer transferred on arbitrary substrates, such as Si, glass, and flexible plastic substrates utilizing direct bonding and epitaxial lift-off (ELO) techniques. Owing to Ge epitaxial growth on GaAs substrates with AlAs release layer, we successfully transferred epitaxial Ge layers on arbitrary substrates with a wide range of thickness from several um to 1 nm. This layer tranfer approach enables us to realize Ge-based monolithic 3D devices without degradation of Ge crystalline quality.

引用

页码：9 / 10

页数：2

共 18 条

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