A high temperature superconductor latch

被引:0
|
作者
Hu, CH [1 ]
Jiang, JF [1 ]
Cai, QY [1 ]
机构
[1] Shanghai Jiao Tong Univ, Res Inst Micro Nanometer Sci & Technol, Shanghai 200030, Peoples R China
关键词
logic devices; simulation; superconducting devices; tunnel effect;
D O I
10.1109/TASC.2003.814150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A latch based on High Temperature Superconductor Single-Hole Transistor (HTS-SHT) and High Temperature Superconductor-Normal Conductor-High Temperature Superconductor (HTS-SNS) junction is proposed in this paper. Firstly, we propose an improved HTS-SHT model based on three-state master equation method, which is comparable to Monte Carlo method in precision even in high voltage region of V-DD. Then, we present a theoretical analysis for this proposed latch, where HTS-SHT is described as this improved three-state model and HTS-SNS junction as a simplified model of Kummel-Nicolsky (KN) theory. In the proposed latch, HTS-SHT acts as a drive and HTS-SNS junction acts as a load, where we utilize the low-voltage-negative-differential-resistance (LVNDR) effect of HTS-SNS junction, and the clear Coulomb staircase of HTS-SHT having asymmetric junctions.
引用
收藏
页码:1060 / 1062
页数:3
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