Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si

被引：15
|
作者：
Rupesinghe, NL [1 ]
Chhowalla, M
Amaratunga, GAJ
Weightman, P
Martin, D
Unsworth, P
Murray, J
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Univ Liverpool, Interdisciplinary Res Ctr Surface Sci, Liverpool L69 3BX, Merseyside, England
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.1310623
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to study the influence of the back barrier on the electron emission properties of tetrahedral amorphous carbon (ta-C), we have deposited identical films on p and n+ Si. The valence and conduction band offsets were measured for ta-C on p and n+ Si using in situ x-ray photoelectron spectroscopy and optical spectroscopy. From the band measurements it is shown that there is a substantial back barrier to emission. We show that for films having very similar properties, the electron emission can be influenced by the ta-C/Si heterojunction. (C) 2000 American Institute of Physics. [S0003-6951(00)00138-8].
引用
收藏
页码：1908 / 1910
页数：3
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