Infrared light-emitting diodes based on GaInAsSb solid solutions grown from lead-containing solution-melts

被引：3
|
作者：
Astakhova, AP [1 ]
Grebenshchikova, EA [1 ]
Ivanov, ÉV [1 ]
Imenkov, AN [1 ]
Kunitsyna, EV [1 ]
Parkhomenko, YA [1 ]
Yakovlev, YP [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 12期
关键词：
D O I：
10.1134/1.1836064
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Light-emitting diodes (LEDs) were fabricated on the basis of GaInAsSb alloys grown from lead-containing solution-melts. Electroluminescence characteristics and their current and temperature dependences were studied. The external photon yield at room temperature was 1.6 and 0.11% for LEDs with emission wavelengths lambda = 2.3 and 2.44 mum, respectively. For LEDs with emission wavelength lambda = 2.3 mum, the average emission power P = 0.94 mW was attained in the quasi-continuous mode at room temperature. In the pulsed mode, the peak radiation power was P = 126 mW at a current of 3 A, a pulse duration of 0.125 mus, and a frequency of 512 Hz. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：1419 / 1425
页数：7
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