Improvement and optimization of InAsxP1-x/InP multi quantum well solar cells

Most of the incident photons in an InP-based multi-quantum well solar cells (MQWSC) are expected to be converted before reaching the base of the device (i.e., converted in the emitter and intrinsic region). Indeed, the external quantum efficiency of the MQWSC is found not to be very much affected by base thickness reduction. By using this property and refined growth interruption schemes, comparable efficiencies are obtained with very thin MQWSC and thick traditional InP devices. The usual MQWSC lower conversion efficiency is mostly due to interface defects, which degrades both open circuit voltage (V-oc) and fill factor (FF). In this work optimization in device design and quantum well region growth have been beneficial by improving both Voc and FF of the multi quantum well solar cells.