Semi-empirical model to predict the threshold voltage and Id-Vd characteristics of small geometry LDD MOSFETs

被引：0
|
作者：
Kalra, E [1 ]
Kumar, A [1 ]
Haldar, S [1 ]
Gupta, RS [1 ]
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A continous semi-empirical model for snail geometry lightly doped drain MOSFET is developed. The expressions for body factors, threshold voltage, drain current, conductances are derived and the results so obtained are compared with the experimental data and are in excellent agreement.
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页码：594 / 597
页数：4
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