Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography

被引：8
|
作者：
van Dodewaard, AJ
Ketelaars, WSMM
Roes, RFM
Kwinten, JAJ
van Delft, FCMJM
van Run, AJ
van Langen-Suurling, AK
Romijn, J
机构：
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[2] Delft Univ Technol, DIMES, NL-2600 GB Delft, Netherlands
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(00)00356-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The negative tone resists NEB22 and UVN30 have been studied for their contrast and resolution in e-beam lithography, as well as in 248 nm DW lithography. Also, their etch resistances have been determined in O-2, SF6/He and CHF3/O-2 plasmas in comparison with novolac resists. NEB22 shows a slightly higher resolution and higher contrasts and UVN30 shows a better FEB lattitude. Both resists show excellent etch resistances and can be exposed by a DUV stepper and, hence, are suitable for 'Mix-and-Match' technology. For both resists, processing conditions, which result in higher contrasts, also tend to result in poorer exposure lattitudes.
引用
收藏
页码：461 / 464
页数：4
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