Plasma enhanced atomic layer deposition of Al2O3 and TiN

被引：0
|
作者：
Choi, SW [1 ]
Jang, CM [1 ]
Kim, DY [1 ]
Ha, JS [1 ]
Park, HS [1 ]
Koh, W [1 ]
Lee, CS [1 ]
机构：
[1] Genitech Inc, Proc Dev Grp, Taejon 306230, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
ALD; PEALD; Al2O3; TiN;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The feasibility of fabricating ultra thin oxide and nitride compound films using plasma enhanced atomic layer deposition (PEALD) technique was demonstrated with examples of Al2O3 and TiN. Alternative supply of tri-methyl aluminum (TMA) and plasma-activated oxygen (O-2) successfully deposited uniform Al2O3 films. Also, for TiN, titanium tetrachloride (TiCl4) and plasma-activated mixed gas of nitrogen (N-2) and hydrogen (H-2) were used as reactants and successfully deposited TiN films as well. PEALD technique provides highly pure films with excellent conformality and precise control of thickness in atomic scale. Compared to thermal ALD, PEALD showed several advantages such as increased film growth rate, low process temperature and no explicit purge step.
引用
收藏
页码：S975 / S979
页数：5
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