A 2-26GHz MMIC power amplifier with low noise figure

被引：1

作者：

Chen, XJ ^{[1
]}

Gao, JF ^{[1
]}

Lin, JT ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China

来源：

2000 2ND INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICMMT.2000.895622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the modeling, design, fabrication and performance of a monolithic 2 similar to 26 GHz MMIC PHEMT power amplifier with low noise characteristic. By using distributed circuit and series gate capacitors, the measured gain is 6.5+/-0.5dB with both in and out VSWR less than 2.0 in the broad band, and the measured output power is over 300 mW with 3.5 similar to5.5dB noise figure in 2 similar to 20 GHz frequency range. The amplifier is truly monolithic, with all matching and biasing and DC block circuitry included on the chip. The finished chip size is 3.2mmX1.275mmX0.1mm.

引用

页码：68 / 71

页数：4

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