300GHz Band On-Chip Vivaldi Antenna on Dual-Layer Proton Irradiated CMOS Si Substrate

被引：0

作者：

Herdian, Hans ^{[1
]}

Inoue, Takeshi ^{[2
]}

Hirano, Takuichi ^{[3
]}

Sogabe, Masatsugu ^{[2
]}

Shirane, Atsushi ^{[1
]}

Okada, Kenichi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Meguro Ku, 2-12-1-S3-28 Oookayama, Tokyo 1528552, Japan

[2] SHI ATEX Co Ltd, 1501 Imazaike, Saijo City, Ehime 7991393, Japan

[3] Tokyo City Univ, Setagaya Ku, 1-28-1 Tamazutsumi, Tokyo 1588557, Japan

来源：

2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2021年

关键词：

300GHz; on-chip; antenna; Vivaldi; proton irradiation;

D O I：

10.1109/APMC52720.2021.9661901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 300GHz band on-chip Vivaldi antenna implemented on standard 65nm CMOS technology. Dual-layer proton irradiation is used to reduce substrate loss with smaller proton fluence requirements compared to conventional proton irradiation without compromising thermal reliability. The Si substrate is ground to 50ttm thickness to minimize radiation pattern distortion due to surface waves. The irradiation process improves the measured antenna gain by around 6.3dB, resulting in 3.1dBi measured gain at 285GHz after irradiation. To check thermal reliability, the antenna chip is heated to 260 degrees C for 1-minute to simulate the peak temperature of lead-free reflow soldering. After heating, the antenna still maintains 2.3dBi measured antenna gain at 285GHz.

引用

页码：440 / 442

页数：3

共 34 条

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