Non-monotonous relaxation of the luminescence intensity of porous silicon

被引：0
|
作者：
Kompan, ME [1 ]
Kuz'minov, EG [1 ]
Shabanov, IJ [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PHYSICA SCRIPTA | 1998年 / 57卷 / 03期
关键词：
D O I：
10.1088/0031-8949/57/3/022
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The relaxation of the luminescence intensity for porous silicon was for the first time investigated with red light excitation. A new type of relaxation behavior was observed under these excitation conditions. The data on the evolution of the photoluminescence intensity and the observation under the same conditions of a persistent absorption saturation are described. A model is proposed to explain the observed effects as manifestations of a general carrier relaxation process.
引用
收藏
页码：463 / 466
页数：4
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