Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide (VO2)

被引：17
|
作者：
Mani, R. G. [1 ]
Ramanathan, S.
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Harvard Univ, McKay Lab, Cambridge, MA 02138 USA
[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2767189
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An electrical study of thin VO2 films in the vicinity of the structural phase transition at 68 degrees C shows (a) that the electrical resistance R follows log(R)proportional to-T over the T range, 20 < T < 80 degrees C covering both sides of the structural transition, and (b) a history dependent hysteresis loop in R upon thermal cycling. These features are attributed here to transport through a granular network.
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页数：3
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