g-factor tuning in self-assembled quantum dots

被引:16
|
作者
Sheng, Weidong [1 ]
机构
[1] Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China
关键词
angular momentum; excitons; gallium arsenide; g-factor; ground states; III-V semiconductors; indium compounds; semiconductor quantum dots; tight-binding calculations; SPIN;
D O I
10.1063/1.3367707
中图分类号
O59 [应用物理学];
学科分类号
摘要
The possibility of electrical tuning of exciton g-factors in self-assembled InAs/GaAs quantum dots is explored theoretically by means of a tight-binding-like effective bond-orbital approach. The electron g-factor in the dots of various sizes is found to exhibit very little change over a broad range of the field strength. In contrast, the ground hole state in the dots of high aspect ratio is seen very sensitive to the applied field, its g-factor even changes the sign with the field. The distinct behavior of the electron and hole g-factors in the presence of electric field is explained in terms of nonzero envelope orbital angular momentum carried by the hole states.
引用
收藏
页数:3
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